Effect of passivating oxides on the surface recombination velocity in silicon-Reference-Cited by-同舟云学术

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Effect of passivating oxides on the surface recombination velocity in silicon

Published:1989-05-16 Issue:1 Volume:113 Page:K61-K65
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Poggi A.,Susi E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Oxidation condition dependence of surface passivation in high efficiency silicon solar cells

2. , and , Proc. Internat. Symp. Solar Energy, Electrochem. Soc., Princeton 1976 (p. 283).

3. , , and , 18th Photovoltaic Specialist Conf., Las Vegas 1985 (p. 611).

4. Recombination mechanisms and doping density in silicon

5. Theory of the Photomagnetoelectric Effect in Semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface damage in processed silicon;Materials Science and Engineering: B;1996-12

2. Study of the electrical active defects induced by reactive ion etching in n-type silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-09

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