The Properties of Amorphous Silicon Doped with the Isovalent Germanium Impurity-Reference-Cited by-同舟云学术

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The Properties of Amorphous Silicon Doped with the Isovalent Germanium Impurity

Published:1986-03-16 Issue:1 Volume:94 Page:379-384
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Khokhlov A. F.,Mashin A. I.,Ebshov A. V.,Mobdvinova Yu. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide

2. Substitutional doping of amorphous silicon

3. Proc. VII. Internat. Conf. Amorphous and Liquid Semiconductors, Edinburgh 1977 (p. 3).

4. Electrical and optical properties of amorphous Si:F:H alloys

5. Physical characterization of halogenated and hydrogenated amorphous silicon films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping and impurity compensation by ion implantation in a-SiGe films;Semiconductors;1998-10

2. Germanium implantation into amorphous silicon films;Ion Beam Modification of Materials;1996

3. Germanium implantation into amorphous silicon films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12

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