Transmutation Doping of Indium Phosphide and Gallium Arsenide Due to Protons and α-Particles-Reference-Cited by-同舟云学术

Transmutation Doping of Indium Phosphide and Gallium Arsenide Due to Protons and α-Particles

Published:1990-01-16 Issue:1 Volume:117 Page:85-90
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Zakharenkov L. F.,Kozlovskii V. V.,Shustrov B. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Nuclear Irradiation of Semiconducting Materials, Ed. Izd. in. Lit., Moscow 1954 (p. 62)

2. (Ed.), Neutron Transmutation Doping in Semiconductors, Plenum Press, New York/London 1979 (p. 270)

3. (Ed.), Nuclear Irradiation of Semiconductors, Izd. Nauka, Novosibirsk 1980 (p. 183)

4. and , p–n Junction Creation in p-Silicon Due to α-Particles, Radiation Physics of Intermetallic Crystals, Izd. Nauka i Tekhnika, Minsk 1970 (p. 191)

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