Physical processes in forward-biased ZnS MIS light-emitting diodes with a „thick” interfacial layer-Reference-Cited by-同舟云学术

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Physical processes in forward-biased ZnS MIS light-emitting diodes with a „thick” interfacial layer

Published:1981-08-16 Issue:2 Volume:66 Page:749-759
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lukyanchikova N. B.,Pavelko T. M.,Pekar G. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electroluminescence in forward-biased zinc selenide Schottky diodes

2. Electroluminescence in Forward-Biased ZnSe Diodes

3. Blue light emission in forward-biased ZnS MIS diodes

4. , and , in: Abstr. III. IEEE Specialist. Conf. Technology of Electroluminescent Diodes, Sen Francisco (California) 1978 (p. 4).

5. and , in: Abstr. 2nd All-Union Conf. Wide-Band-Gap Semiconductors, Leningrad, January 1979 (p. 49) (in Russian).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A blue emitting ZnSe LED operating by impact ionization;Semiconductor Science and Technology;1991-10-01

2. Surface plasmon polariton enhanced light emission from Schottky diodes;Applied Physics Letters;1988-04-04

3. Schottky-Barrier-Type Optoelectronic Structures;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984

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