The influence of the residual impurities (C, O) on the crystal structure of GaAs-Reference-Cited by-同舟云学术

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The influence of the residual impurities (C, O) on the crystal structure of GaAs

Published:1981-11-16 Issue:1 Volume:68 Page:261-267
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Borisova L. A.,Pasemann M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. in: Thesis of V. Vses. Simp. po sintesu and rosty poluprov. kristallov i plenok, Novosibirsk, Izd. Nauka, Moskva 1978 (p. 253).

2. and , see [1] (p. 56).

3. and , in: Thesis of VI. Vses. Soveshch. po fiziko-khimicheskim osnovam legirovaniya poluprovodnikov, Moskva 1978 (p. 126).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of the growth temperature on residual impurities in SSD-GaP;Crystal Research and Technology;1985-11

2. High-Resolution Electron Microscopy of Crystals;Crystals;1982

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