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Flash Lamp Annealing and RF Plasma Annealing of AlSiO2Si Structures

  • Published:1990-08-16 Issue:2 Volume:120 Page:447-456
  • ISSN:0031-8965
  • Container-title:physica status solidi (a)
  • language:de
  • Short-container-title:phys. stat. sol. (a)

Author:

Nazarov A. N.,Lysenko V. S.,Valiev S. A.,Lokshin M. M.,Tkachenko A. S.,Kunitskii I. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced recrystallization and dopant activation of P+ion-implanted super-thin Ge layers by RF hydrogen plasma treatment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09

2. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

3. Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects;International Journal of Hydrogen Energy;2001-05

4. Acoustic Deep-Level Transient Spectroscopy of MIS Structures;Physica Status Solidi (a);1991-07-16
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