Equivalent circuit for ion implanted counterdoped layers as determined by MOS admittance and crosstalk measurements-Reference-Cited by-同舟云学术

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Equivalent circuit for ion implanted counterdoped layers as determined by MOS admittance and crosstalk measurements

Published:1981-12-16 Issue:2 Volume:68 Page:589-601
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bach H. G.,Fahrner W. R.,Bräunig D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Lateral AC current flow model for metal-insulator-semiconductor capacitors

2. Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C‐V and Q‐V analysis

3. Characterization of MOS structures with buried layers

4. , and , submitted to IEEE Trans. Electron Devices.

5. Carrier mobilities in silicon empirically related to doping and field

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structures;physica status solidi (a);1986-05-16

2. Implantation Profiles of Buried Layers (MOS pn) from HF or LFC(U) Curves;physica status solidi (a);1982-12-16

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