Influence of Oxygen Partial Pressure and Heat Treatment on the Properties of Reactively Sputtered In2O3 Films-Reference-Cited by-同舟云学术

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Influence of Oxygen Partial Pressure and Heat Treatment on the Properties of Reactively Sputtered In2O3 Films

Published:1996-05-16 Issue:1 Volume:155 Page:115-123
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Jayaraj M. K.,Loreti S.,Agati A.,Parretta A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. and , in: Luminescence and Light Emitting Diodes, Ed. International Ser. Science of Solid State, Pergamon Press, Oxford 1978.

2. Operation of ITO/Si heterojunction solar cells

3. Efficient sprayed In2O3 : Snn‐type silicon heterojunction solar cell

4. Evaporation of High Quality In2 O 3 Films from In2 O 3 / In Source—Evaporation Chemistry and Thermodynamics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness;Journal of Applied Physics;2001-11-15

2. Chemical composition and crystalline structure of SnO2 thin films used as gas sensors;Thin Solid Films;1997-07

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