Study of radiation defect clusters, their structure and properties in, proton-irradiated silicon-Reference-Cited by-同舟云学术

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Study of radiation defect clusters, their structure and properties in, proton-irradiated silicon

Published:1982-04-16 Issue:2 Volume:70 Page:387-395
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Kuznetsov V. I.,Lugakov P. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. The kinetics of formation and the parameters of radiation defect clusters in silicon

2. Thèse Doc. es Sci., Toulouse 1969.

3. Electrical Studies of Electron-Irradiatedn-Type Si: Impurity and Irradiation-Temperature Dependence

4. , , , , , and , Internat. Conf. Radiation Effects in Semiconductors, Dubrovnk 1976, Institute of Physics, Bristol/London 1977 (p. 1).

5. Carrier Removal in Neviron Irradiated Silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Annealing studies of vacancies in proton irradiated silicon;Journal of Applied Physics;1993-04-15

2. Nuclear and damage effects in Si produced by irradiations with medium energy protons;IEEE Transactions on Nuclear Science;1991-12

3. Proton Beam Modification of Selected AIIIBVCompounds;Physica Status Solidi (a);1991-03-16

4. Influence of irradiation temperature on radiation defect accumulation in silicon;Physica Status Solidi (a);1988-07-16

5. Parameters of radiation defect clusters in silicon irradiated by high-energy γ-rays;Radiation Effects;1985-01

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