The influence of substrate temperature on the oriented growth of Ni and Ni2Si on Si(111)-Reference-Cited by-同舟云学术

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The influence of substrate temperature on the oriented growth of Ni and Ni2Si on Si(111)

Published:1983-01-16 Issue:1 Volume:75 Page:195-205
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Mattheis E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. and , in: Thin Films-Interdiffusion and Reactions, Ed. and , Wiley, New York 1978 (p. 359).

2. Diffusion of nickel in silicon below 475 °C

3. The structure of nickel and cobalt films on the (111) surface of n-type silicon

4. Ni on Si(111): Reactivity and Interface Structure

5. Oxide Growth on Etched Silicon in Air at Room Temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A reinvestigation of Ni2Si thin film growth on Si(111) by TEM and RBS. Evidence of the presence of an interfacial NiSi layer prior to Ni consumption;Physica Status Solidi (a);1988-09-16

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