The thermally stimulated conductivity and the features of the process of recombination of charge carriers in semi-insulating GaAs(Cr)-Reference-Cited by-同舟云学术

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The thermally stimulated conductivity and the features of the process of recombination of charge carriers in semi-insulating GaAs(Cr)

Published:1977-02 Issue:2 Volume:39 Page:717-724
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Filesta L. I.,Ilyashenko A. G.,Vorobev Yu. V.,Karkhanin Yu. I.,Sheinkman M. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. On the mechanism of the recombination of charge carriers in semi-insulating GaAs(Cr)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current;Iranian Journal of Science and Technology, Transactions A: Science;2016-12-08

2. The Auger Processes with Energy Transfer to the Bound Charge Carriers in Multi-Valley Semiconductors;physica status solidi (b);1984-05-01

3. Study of Non-Linear Extrinsic Luminescence in GaAs III. Sublinear Emission Due to Auger Transitions in Radiative Centres;Physica Status Solidi (a);1979-07-16

4. Study of non-linear extrinsic luminescence in GaAs. II. The role of auger recombination;Physica Status Solidi (a);1979-02-16

5. Some peculiarities of thermostimulated conductivity and optical quenching of the photocurrent in crystals with the auger excitation of recombination centres;Physica Status Solidi (a);1978-12-16

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