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Curie temperature as a critical temperature for dielectric, galvanomagnetic, and photoelectric phenomena in strongly doped Pb1−xSnxTe

  • Published:1983-11-16 Issue:1 Volume:80 Page:K101-K104
  • ISSN:0031-8965
  • Container-title:Physica Status Solidi (a)
  • language:de
  • Short-container-title:Phys. Stat. Sol. (a)

Author:

Herrmann K. H.,Möllmann K.-P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Photoferroelectric behaviour in Pb0.78Sn0.22, Te:In

2. Characteristic steps in the relaxation curves of field-quenched persistent photoconductivity of Pb0.78Sn0.22Te:In

3. , and , Proc. 16th Internat. Conf. Phys. Semicond., Montpellier 1982, in: Physica 117/118 B, 582 (1983).

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1. Effect of electron trapping centers on electrical and photoelectric properties of PbSnTe : In;Optoelectronics, Instrumentation and Data Processing;2011-10

2. Anisotropy of galvanomagnetic phenomena in epitaxial films of ferroelectric semiconductor PbSnTe:In;2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies;2009-10

3. Terahertz Sensitivity of Pb1-xSnxTe:In;Ferroelectrics;2007-03-20

4. Injection currents in narrow-gap (Pb1−x SnxTe):In insulators;Semiconductors;2005-05

5. Problem of impurity states in narrow-gap lead telluride-based semiconductors;Journal of Experimental and Theoretical Physics Letters;2004-07
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