The dependence of raman scattering cross section on laser intensity for semiconducting NaX WO3 crystals-Reference-Cited by-同舟云学术

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The dependence of raman scattering cross section on laser intensity for semiconducting NaX WO3 crystals

Published:1973-05-16 Issue:1 Volume:17 Page:K57-K60
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Salje E.,Hoppmann G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. The Raman effect in crystals

2. and , Z. anorg. allg. Chem., in the press.

3. Zur Kinetik der durch optische Grundgitteranregung in einem Überschußhalbleiter erzeugten Raumladungen

4. Leitungsmechanismus und Energieumwandlung in Festkörpern, Göttingen 1965 (p. 388).

5. Chapter 1 Lattice Reflection

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bibliography of ferroelectrics;Ferroelectrics;1973-01

2. 73M19 - 75Z2;Landolt-Börnstein - Group III Condensed Matter

3. 2.2.4 Data: Crystallographic properties of non-ABX3compounds;Landolt-Börnstein - Group III Condensed Matter

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