MOSFET‐C ‐based grounded active inductors with electronically tunable properties-Reference-Cited by-同舟云学术

MOSFET‐C ‐based grounded active inductors with electronically tunable properties

Published:2020-05-12 Issue:8 Volume:30 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Yesil Abdullah¹,Yuce Erkan²^ORCID,Minaei Shahram³

Affiliation:

1. Department of Electrical and Electronics EngineeringBandirma Onyedi Eylul University Balikesir Turkey

2. Department of Electrical and Electronics EngineeringPamukkale University Denizli Turkey

3. Department of Electronics and Communications EngineeringDogus University Istanbul Turkey

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22274

Reference51 articles.

1. Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters

2. MOS Only Grounded Active Inductor Circuits and Their Filter Applications

3. Design of a new low loss fully CMOS tunable floating active inductor

4. A low loss, low voltage and high Q active inductor with multi‐regulated cascade stage for RF applications;Momen HG;Proc IEEE Int Conf Electron Circuits Syst,2016

5. CMOS high-performance UWB active inductor circuit

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