Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE-Reference-Cited by-同舟云学术

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Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE

Published:2002-09-18 Issue:10 Volume:85 Page:1-6
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Aoyama Tomoko,Ohno Yutaka,Kishimoto Shigeru,Maezawa Koichi,Mizutani Takashi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference6 articles.

1. High-speed and low-power operation of a resonant tunneling logic gate MOBILE

2. A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates

3. Analytical expression of maximum bias slew rate of RTD-pair circuit. TWHM'00, Abstract, p 60-61, 2000.

4. A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operation Limits for RTD-Based MOBILE Circuits;IEEE Transactions on Circuits and Systems I: Regular Papers;2009-02

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