Improved Conductivity and in Situ Formed Heterojunction via Zinc Doping in CuBi2O4 for Photoelectrochemical Water Splitting

Author:

Hu Yingfei12,Hu Qingyuan1,Chen Xianliu3,Zhao Mengting1,Wang Yumeng1,Guan Hangmin1,Hu Xuemin1,Wang Yuanyuan1ORCID,Feng Jianyong2

Affiliation:

1. School of Materials Engineering Jinling Institute of Technology Nanjing 211169 P. R. China

2. Collaborative Innovation Center of Advanced Microstructures National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Nanjing University Nanjing 210093 P. R. China

3. Analysis and Test Center Chinese Academy of Tropical Agricultural Sciences Haikou 571101 P. R. China

Abstract

AbstractAs a photocathode with a band gap of about 1.8 eV, copper bismuthate (CuBi2O4) is a promising material for photoelectrochemical (PEC) water splitting. However, weak charge transfer capability and severe carrier recombination suppress the PEC performance of CuBi2O4. In this paper, the conductivity and carriers transport of CuBi2O4 are improved via introducing Zn2+ into the synthesis precursor of CuBi2O4, driving a beneficial 110 mV positive shift of onset potential in photocurrent. Detailed investigations demonstrate that the introduction of an appropriate amount of zinc leads to in situ segregation of ZnO which serves as an electron transport channel on the surface of CuBi2O4, forming heterojunctions. The synergistic effect of heterojunctions and doping simultaneously promotes the charge transfer and the carrier concentration. OCP experiment proves that ZnO/Zn−CuBi2O4 possesses better charge separation; the Mott–Schottky curve shows that the doping of Zn significantly enhances the carrier concentration; carrier lifetime calculated from time–resolved photoluminescence confirms faster extraction of carriers.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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