Assessment of through‐silicon‐vias with different configurations of ground vias and accounting for substrate losses-Reference-Cited by-同舟云学术

Assessment of through‐silicon‐vias with different configurations of ground vias and accounting for substrate losses

Published:2021-07-17 Issue:10 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Rodríguez‐Velásquez Yojanes¹^ORCID,Murphy‐Arteaga Roberto S.¹^ORCID,Torres‐Torres Reydezel¹^ORCID

Affiliation:

1. Electronics Department Instituto Nacional de Astrofísica, Óptica y Electrónica Puebla Mexico

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22811

Reference31 articles.

1. Interchip via technology for vertical system integration;Ramm P;Proc IEEE Int Intercon Technol Conf,2001

2. IC stacking technology using fine pitch, nanoscale through silicon vias;Spiesshoefer S;Proc 53rd IEEE Electron Comp Technol Conf,2003

3. Z‐axis interconnects using fine pitch, nanoscale through‐silicon vias: process development;Spiesshoefer S;Proc 54th IEEE Electron Comp Technol Conf,2004

4. Modeling and fabrication aspects of cu‐and carbon nanotube‐based through‐silicon vias;Goyal T;IETE J Res,2018

5. Through silicon via interposer for millimetre wave applications;Lim TG;Proc 61st IEEE Electron Comp Technol Conf,2011

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