GaN High Electron Mobility Transistor Device Technology for RF and High‐Power Applications

Author:

Khan A. B.

Publisher

Wiley

Reference84 articles.

1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. K.Joshin “A 174 W high‐efficiency GaN HEMT power amplifier for W‐CDMA base station applications ” in Proc. IEEE International. Electron Devices Meeting pp. 12.6.1–12.6.3 2003.

4. GaN-Based RF Power Devices and Amplifiers

5. Gallium nitride devices for power electronic applications;Baliga;Semicond. Sci. Technol.,2013

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1. Comparative study on Analog & RF Performance of an Underlapped DG InAlGaN/GaN based MOS-HEMT between GaN layer width and InAlGaN layer width variation;2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA);2023-09-29

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