Photochemical Vapor Deposition of Wide Bandgap III-V Materials: Influence of Photochemically Generated Radicals on the Growth of Aluminum Nitride and Gallium Nitride Films-Reference-Cited by-同舟云学术

Photochemical Vapor Deposition of Wide Bandgap III-V Materials: Influence of Photochemically Generated Radicals on the Growth of Aluminum Nitride and Gallium Nitride Films

Published:1997-08 Issue:4 Volume:3 Page:209-217
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Alwan James J.,Eden J. Gary

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference22 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

5. See, e.g., Photochemical Vapor Deposition, Wailey-Interscience, New York 1992.

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