Structural Properties of Yttria-Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD-Reference-Cited by-同舟云学术

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Structural Properties of Yttria-Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD

Published:1997-03 Issue:2 Volume:3 Page:91-96
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Garcia Gemma,Casado Juan,Llibre Joan,Cifre Joan,Figueras Albert,Galí Salvador,Bassas Josep

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference9 articles.

1. in Science and Technology of Zirconia V (Ed: ), Technomic, Lancaster, PA 1993, p. 31.

2. Electronic structure and phase stability of ZrO2

3. Characterization and Stabilization of Metastable Tetragonal ZrO2

4. Lattice Parameters and Density for Y2O3-Stabilized ZrO2

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1. High-growth rate YSZ thermal barrier coatings deposited by MOCVD demonstrate high thermal cycling lifetime;Materials Science and Engineering: A;2011-01

2. Nanocrystalline zirconium oxide thin films grown under low pulsed dc voltages;Journal of Physics D: Applied Physics;2009-10-14

3. MOCVD of YSZ coatings using β-diketonate precursors;Journal of Alloys and Compounds;2009-02

4. MOCVD of zirconium oxide thin films: Synthesis and characterization;Applied Surface Science;2009-02

5. Yttria-stabilized zirconia films of different composition as buffer layers for the deposition of epitaxial diamond/Ir layers on Si(001);Diamond and Related Materials;2006-04

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