Solution-Processed Composite Interfacial Layer of MoO x -Doped Graphene Oxide for Robust Hole Injection in Organic Light-Emitting Diode-Reference-Cited by-同舟云学术

Solution-Processed Composite Interfacial Layer of MoO x -Doped Graphene Oxide for Robust Hole Injection in Organic Light-Emitting Diode

Published:2018-02-14 Issue:4 Volume:12 Page:1700434
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Zheng Qinghong¹,Li Wanshu¹,Zhang Yan¹,Xu Kai¹,Xu Jiwen¹,Wang Hua¹,Xiong Jian¹,Zhang Xiuyun¹,Zhang Xiaowen¹

Affiliation:

1. School of Materials Science and Engineering & Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology; Guilin 541004 P.R. China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangxi Province

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Solution-processed MoOx hole injection layer towards efficient organic light-emitting diode

2. A solution-processable inorganic hole injection layer that improves the performance of quantum-dot light-emitting diodes

3. Low-Temperature Solution-Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole-Transport Layer in Organic Electronics

4. Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes

5. Post-treatment-Free Solution-Processed Non-stoichiometric NiOxNanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices

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