Optimization of Electrical Properties of MoS 2 Field‐Effect Transistors by Dipole Layer Coulombic Interaction With Trap States-Reference-Cited by-同舟云学术

Optimization of Electrical Properties of MoS 2 Field‐Effect Transistors by Dipole Layer Coulombic Interaction With Trap States

Published:2019-03-27 Issue:7 Volume:13 Page:1900007
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Chuai Xichen¹²³,Yang Guanhua¹²³,Wei Wei¹²,Wang Jiawei¹²,Shi Xuewen¹²,Lu Congyan¹²,Zhao Ying¹²,Su Yue¹²,Wu Quantan¹²,Geng Di¹²,Lu Nianduan¹²,Li Ling¹²,Liu Ming¹²

Affiliation:

1. Key Laboratory of Microelectronics Device & Integrated TechnologyInstitute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

2. University of Chinese Academy of SciencesBeijing100049China

3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing210009China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900007

Reference42 articles.

1. Single-Layer MoS2 Electronics

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Single-Layer MoS2 Phototransistors

5. Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

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