Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms-Reference-Cited by-同舟云学术

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Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms

Published:2018-11-27 Issue:3 Volume:13 Page:1800489
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kim Hyunseok¹,Lee Wook‐Jae²³,Chang Ting‐Yuan¹,Huffaker Diana L.⁴⁵

Affiliation:

1. Department of Electrical and Computer EngineeringUniversity of California Los AngelesLos AngelesCA90095United States

2. School of EngineeringCardiff UniversityCardiffCF24 3AAUnited Kingdom

3. Electronics and Telecommunications Research InstituteDaejeon34129South Korea

4. School of Physics and AstronomyCardiff UniversityCardiffCF24 3AAUnited Kingdom

5. California Nano‐Systems InstituteUniversity of California Los AngelesLos AngelesCA 90095United States

Funder

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201800489

Reference44 articles.

1. CMOS Photonics for High-Speed Interconnects

2. III-V/silicon photonics for on-chip and intra-chip optical interconnects

3. On-chip light sources for silicon photonics

4. Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

5. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells

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