Band alignment at sputtered ZnSx O1-x/Cu(In,Ga)(Se,S)2 heterojunctions
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference15 articles.
1. On the CdS/CuInSe2 conduction band discontinuity
2. Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments
3. Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient
4. Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering
5. Strong Valence-Band Offset Bowing ofZnO1−xSxEnhancesp-Type Nitrogen Doping of ZnO-like Alloys
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1. Electrical barriers and their elimination by tuning (Zn,Mg)O buffer composition in Cu(In,Ga)S2 solar cells: systematic approach to achieve over 14% power conversion efficiency;Journal of Physics: Energy;2022-09-28
2. Reactively sputtered Zn(O,S) buffer layers for controlling band alignment of Cu(In,Ga)Se2 thin-film solar cell interface;Journal of Alloys and Compounds;2020-11
3. Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells;Progress in Photovoltaics: Research and Applications;2020-07-05
4. Effect of Na from soda-lime glass substrate and as post-deposition on Cu(In,Ga)Se2 absorbers: A photoelectron spectroscopy study in ultra-high vacuum;Applied Surface Science;2020-06
5. System for manufacturing complete Cu(In,Ga)Se2 solar cells in situ under vacuum;Solar Energy;2020-03
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