2D MoSe2 Structures Prepared by Atomic Layer Deposition-Reference-Cited by-同舟云学术

2D MoSe2 Structures Prepared by Atomic Layer Deposition

Published:2018-03-26 Issue:5 Volume:12 Page:1800023
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Krbal Milos¹^ORCID,Prikryl Jan¹^ORCID,Zazpe Raul¹^ORCID,Dvorak Filip¹^ORCID,Bures Filip²^ORCID,Macak Jan M.¹³^ORCID

Affiliation:

1. Faculty of Chemical Technology, Center of Materials and Nanotechnologies, University of Pardubice; Nam. Cs. Legii 565 53002 Pardubice Czech Republic

2. Faculty of Chemical Technology, Institute of Organic Chemistry and Technology, University of Pardubice; Studentska 573 53210 Pardubice Czech Republic

3. Central European Institute of Technology, Brno University of Technology; Purkynova 123 61200 Brno Czech Republic

Funder

European Research Council

Ministry of Youth, Education and Sports of the Czech Republic

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Two-Dimensional Transition-Metal Dichalcogenides

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

4. Single-layer MoS2 transistors

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