Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films-Reference-Cited by-同舟云学术

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Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films

Published:2016-07-21 Issue:8 Volume:10 Page:627-633
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Alharbi Abdullah¹,Shahrjerdi Davood¹

Affiliation:

1. Department of Electrical and Computer Engineering; New York University; Brooklyn, NY 11201 USA

Funder

Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600163/fullpdf

Reference30 articles.

1. J. A. Rogers J.-H. Ahn Silicon Nanomembranes: Fundamental Science and Applications (John Wiley &Sons, 2016)

2. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

3. K. Lee J. D. Zimmerman Y. Zhang S. R. Forrest Epitaxial lift-off of GaAs thin-film solar cells followed by substrate reuse, presented at 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012

4. Inorganic Semiconductors for Flexible Electronics

5. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layer-engineered atomic-scale spalling of 2D van der Waals crystals;Matter;2022-11

2. Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating;Thin Solid Films;2018-03

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