Dopant-free back contact silicon heterojunction solar cells employing transition metal oxide emitters-Reference-Cited by-同舟云学术

Dopant-free back contact silicon heterojunction solar cells employing transition metal oxide emitters

Published:2016-08-19 Issue:9 Volume:10 Page:662-667
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Wu Weiliang¹,Bao Jie¹²,Jia Xuguang³,Liu Zongtao²,Cai Lun¹,Liu Binhui¹,Song Jingwei²,Shen Hui¹²³

Affiliation:

1. Institute for Solar Energy Systems; School of Physics, Sun Yat-Sen University; 5th Floor, C Block, Building of Engeneering, 132 Wai Huan Dong Road, Higher Education Mega Center Guangzhou Guangdong Province P.R. China

2. Shunde-SYSU Institute for Solar Energy; No. 1, Desheng Dong Road Daliang, Shunde 528300 Guangdong Province P.R. China

3. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering; Changzhou University; No. 1 Gehu Road Changzhou Jiangsu Province P.R. China

Funder

National High-tech R&D Program of China (863 Program)

Guangdong-Hong Kong Technology Cooperation Funding Scheme

Guangzhou collaborative innovation Major Project of producing, teaching and researching

Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

2. Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation