Performance improvement for epitaxially grown SiGe on Si solar cell by optimizing the back surface field-Reference-Cited by-同舟云学术

Performance improvement for epitaxially grown SiGe on Si solar cell by optimizing the back surface field

Author:

Li Dun¹,Zhao Xin¹,Wang Li¹,Conrad Brianna¹,Soeriyadi Anastasia¹,Lochtefeld Anthony²,Gerger Andrew³,Barnett Allen¹,Perez-Wurfl Ivan¹

Affiliation:

1. School of Photovoltaic and Renewable Energy Engineering; UNSW Australia; Sydney NSW 2052 Australia

2. AmberWave Inc.; Salem NH 03079 USA

3. SolAero Technologies Corp; Albuquerque NM 87123 USA

Funder

Australian Government through the Australian Renewable Energy Agency (ARENA) (Grant no.ARENA1-UFA0001)

NSW Node of the Australian National Fabrication Facility, a company established under the National Collaborative Research Infrastructure Strategy

Australian Microscopy &Microanalysis Research Facility at the Electron Microscope Unit, UNSW Australia

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference21 articles.

3. B. M. Kayes in: 37th IEEE PVSC, 2011, pp. 4-8

4. S. D'Souza in: Proc. IEEE Electrical Power and Energy Conference, 2011, pp. 57-61

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