Effect of iron contamination on grain boundary states at a direct silicon bonded (110)/(100) interface
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Grain Boundaries in Polycrystalline Silicon
2. The bonded unipolar silicon‐silicon junction
3. Deep-level transient spectroscopy study on direct silicon bonded (1 1 0)/(1 0 0) interfacial grain boundary
4. Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)∕(100) interface
5. Chemical natures and distributions of metal impurities in multicrystalline silicon materials
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1. Effect of Erbium Incorporation on SiN x O y /c-Si Interface in Silicon-Based Optoelectronic Devices;IEEE Transactions on Electron Devices;2023-11
2. Study on reducing the contamination of metal impurities for casting silicon ingots by using non-oxide crucible barrier layer;Solar Energy Materials and Solar Cells;2021-10
3. Grain boundary engineering of high performance multicrystalline silicon: Control of iron contamination at the ingot edge;Solar Energy Materials and Solar Cells;2017-11
4. Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer;physica status solidi (a);2012-01-30
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