Improving the material quality of silicon ingots by aluminum gettering during crystal growth
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems; Heidenhofstr. 2 79100 Freiburg Germany
2. Institute for Nuclear Chemistry; Johannes Gutenberg-University of Mainz; Duesbergweg 10-14 55128 Mainz Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600268/fullpdf
Reference21 articles.
1. Silicon nitride coating and crucible-effects of using upgraded materials in the casting of multicrystalline silicon ingots
2. Solar Cell Efficiency Losses Due to Impurities From the Crucible in Multicrystalline Silicon
3. Impact of Impurities From Crucible and Coating on mc-Silicon Quality—the Example of Iron and Cobalt
4. Aluminum gettering of iron in silicon as a problem of the ternary phase diagram
5. H. Hieslmair in: Proc. 25th IEEE PVSC, Washington DC, USA, May 13-17 1996, p. 441
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2. Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion;Journal of Applied Physics;2019-01-28
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