Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%-Reference-Cited by-同舟云学术

Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%

Published:2020-04 Issue:4 Volume:14 Page:1900688
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Wu Weiliang¹²^ORCID,Lin Wenjie¹,Zhong Sihua²,Paviet-Salomon Bertrand³,Despeisse Matthieu³,Jeangros Quentin²,Liang Zongcun¹⁴,Boccard Mathieu²,Shen Hui¹⁴,Ballif Christophe²³

Affiliation:

1. Institute for Solar Energy SystemsSchool of Physics and State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen University (SYSU) Guangzhou 510006 China

2. Photovoltaics and Thin Film Electronics LaboratoryInstitute of MicroengineeringÉcole Polytechnique Fédérale de Lausanne (EPFL) Rue de la Maladière 71b Neuchâtel CH-2000 Switzerland

3. CSEM PV-CenterCentre Suisse d’Électronique et de Microtechnique (CSEM) Rue Jaquet-Droz 1 Neuchâtel CH-2002 Switzerland

4. Shunde-SYSU Institute for Solar EnergyShunde-SYSU Foshan 528300 China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900688

Reference33 articles.

1. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

2. n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis

3. Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%