Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy-Reference-Cited by-同舟云学术

Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy

Published:2016-02-16 Issue:4 Volume:10 Page:339-345
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Müller Sebastian¹,Baumann Roelf-Peter¹,Geßner Thomas²,Weitz R. Thomas³⁴⁵

Affiliation:

1. BASF SE, GMC/O; Carl-Bosch-Str. 38 67056 Ludwigshafen Germany

2. BASF SE, GMV/L; Carl-Bosch-Str. 38 67056 Ludwigshafen Germany

3. BASF SE, GMV/T; Carl-Bosch-Str. 38 67056 Ludwigshafen Germany

4. InnovationLab GmbH; Speyerer Straße 4 69115 Heidelberg Germany

5. Present address: LMU München Fakultät Physik; Amalienstr. 54 80799 München Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference28 articles.

1. 25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors

2. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

3. Approaching disorder-free transport in high-mobility conjugated polymers

4. Organic Light Detectors: Photodiodes and Phototransistors

5. Organic Thin-Film Transistors for Chemical and Biological Sensing

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