Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides-Reference-Cited by-同舟云学术

Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Published:2019-10-07 Issue:12 Volume:13 Page:1900414
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Liu Chien¹,Tung Yi-Chun²,Wu Tian-Li³,Cheng Chun-Hu⁴,Tseng Chih-Yang²,Chen Hsuan-Han¹,Chen Hsi-Han³,Ma Jun⁵,Lin Chien-Liang⁶,Zheng Zhi-Wei⁵,Chou Wu-Ching¹,Hsu Hsiao-Hsuan⁶^ORCID

Affiliation:

1. Department of Electro-PhysicsNational Chiao Tung University Science Building III, No. 1001, Ta Hsueh Rd Hsinchu 300 Taiwan

2. Institute of Photonic SystemNational Chiao Tung University No. 301, Gaofa 3rd Rd., Guiren Dist. Hsinchu 71150 Taiwan

3. International College of Semiconductor TechnologyNational Chiao Tung University 1001 University Road Hsinchu 300 Taiwan

4. Department of Mechatronic EngineeringNational Taiwan Normal University 162, Section 1, Heping E. Rd. Hsinchu 106 Taiwan

5. Department of Electronics EngineeringXiamen University 422 Siming South Road Xiamen 361005 China

6. Department of Materials & Mineral Resources EngineeringNational Taipei University of Technology 1, Sec. 3, Zhong-Xiao E. Rd. Hsinchu 10608 Taiwan

Funder

National Science Council

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900414

Reference26 articles.

1. Y. C.Chiu C. H.Cheng C. Y.Chang M. H.Lee H. H.Hsu S. S.Yen inSymp. on VLSI Technology IEEE New York USA2015 pp.T184–T185.

2. T.Boscke J.Muller D.Brauhaus U.Schroder U.Bottger inInt. Electron Devices Meeting (IEDM) IEEE New York USA2011 p.547.

3. Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

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