Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates-Reference-Cited by-同舟云学术

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Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

Published:2013-07-08 Issue:10 Volume:7 Page:878-881
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Anufriev Roman,Chauvin Nicolas,Khmissi Hammadi,Naji Khalid,Patriarche Gilles,Gendry Michel,Bru-Chevallier Catherine

Funder

French Agence Nationale pour la Recherche (ANR) ‘INSCOOP’ project

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307242/fullpdf

Reference25 articles.

1. Challenges and prospects of nanopillar-based solar cells

2. Photovoltaics with Piezoelectric Core−Shell Nanowires

3. Impact of surfaces on the optical properties of GaAs nanowires

4. Strong Carrier Lifetime Enhancement in GaAs Nanowires Coated with Semiconducting Polymer

5. Quantum efficiency of ZnO nanowire nanolasers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) The Structure-Dependent Properties of InAs Nanowires and Their Devices;ECS Transactions;2016-08-18

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