Partial crystallization in amorphous magnetic film induced by Ru layer interface-Reference-Cited by-同舟云学术

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Partial crystallization in amorphous magnetic film induced by Ru layer interface

Published:2016-12-13 Issue:2 Volume:11 Page:1600341
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Shi J. Z.¹,Yang Y.¹,Tan H. K.¹,Piramanayagam S. N.²,Lim C. B.¹,Seet H. L.¹,Ho S. L.³,Hu J. F.¹

Affiliation:

1. Data Storage Institute, Agency for Science, Technology and Research (A*STAR); 138634 Singapore

2. Physics School of Physical and Mathematical Sciences, Nanyang Technological University; 637371 Singapore

3. School of Engineering, Ngee Ann Polytechnic; 599489 Singapore

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Photovoltaic Technology: The Case for Thin-Film Solar Cells

2. Present status of amorphous soft magnetic alloys

3. Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors

4. Study on high reliability TbFeCoNb magneto‐optical recording disk

5. Perpendicular recording media for hard disk drives

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband strip-line ferromagnetic resonance spectroscopy of soft magnetic CoFeTaZr patterned thin films;AIP Advances;2018-05

2. Pattern transformation of single-material and composite periodic cellular structures;Materials & Design;2017-10

3. Harnessing out-of-plane deformation to design 3D architected lattice metamaterials with tunable Poisson’s ratio;Scientific Reports;2017-08-21

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