The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. New MBE growth method for InSb quantum well boxes
2. Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces
3. Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
4. Self-assembly of laterally aligned GaAs quantum dot pairs
5. Near-field optical spectroscopy ofGaAs∕AlyGa1−yAsquantum dot pairs grown by high-temperature droplet epitaxy
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1. Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry;ACS Omega;2018-08-03
2. Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot;Current Applied Physics;2018-07
3. Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems;Journal of the Korean Physical Society;2018-07
4. GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications;Nanotechnology;2018-03-23
5. Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy;physica status solidi (RRL) - Rapid Research Letters;2016-09
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