Crystallization Study of Ge‐Rich (GeTe) m (Sb 2 Te 3 ) n Using Two‐Step Annealing Process
Author:
Affiliation:
1. Paul‐Drude‐Institut für FestkörperelektronikHausvogteiplatz 5–7D‐10117 BerlinGermany
2. Dipartimento di Fisica, Università di Roma “Tor Vergata”Via della Ricerca Scientifica 1I‐00133 RomeItaly
Funder
Leibniz Gemeinschaft
Erasmus +
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201800632
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1. Internet of Things: Applications and Challenges in Technology and Standardization
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1. Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics;Advanced Electronic Materials;2024-09-11
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