Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility-Reference-Cited by-同舟云学术

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Published:2020-04 Issue:4 Volume:14 Page:1900723
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Deng Yadan¹,Jiang Jingzan¹,Sun Jun¹,Hu Yufeng¹^ORCID,Cui Qiuhong¹,Deng Zhenbo¹,Lou Zhidong¹,Hou Yanbing¹,Teng Feng¹

Affiliation:

1. Key Laboratory of Luminescence and Optical InformationMinistry of EducationInstitute of Optoelectronic TechnologyBeijing Jiaotong University Beijing 100044 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900723

Reference42 articles.

1. Polythiophene-based field-effect transistors with enhanced air stability

2. Performance enhancement of organic thin-film transistors with improved copper phthalocyanine crystallization by inserting ultrathin pentacene buffer

3. Versatile Use of Vertical-Phase-Separation-Induced Bilayer Structures in Organic Thin-Film Transistors

4. Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors

5. Organic thin-film transistors

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