Reversible quenching of luminescence in ZnO films by electric field action-Reference-Cited by-同舟云学术

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Reversible quenching of luminescence in ZnO films by electric field action

Published:2015-04-02 Issue:5 Volume:9 Page:307-311
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Yalishev Vadim Sh.¹,Yuldashev Shavkat U.¹,Park Bae Ho²,Kang Tae Won¹

Affiliation:

1. Quantum-Functional Semiconductor Research Center, Dongguk University; 3-26 Pil-dong 100-715 Chung-gu, Seoul South Korea

2. Division of Quantum Phases and Devices, School of Physics, Konkuk University; 1 Hwayang-dong 143-701 Gwangjin-gu, Seoul South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510071/fullpdf

Reference14 articles.

1. Valence-band ordering in ZnO

2. Transmission Spectra of ZnO Single Crystals

3. A comprehensive review of ZnO materials and devices

4. Bound exciton and donor–acceptor pair recombinations in ZnO

5. Optical investigations on excitons bound to impurities and dislocations in ZnO

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Similar effects of the electric field and annealing on the near-band-edge photoluminescence in ZnO films;Journal of the Korean Physical Society;2016-02

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