Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films-Reference-Cited by-同舟云学术

Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

Published:2018-03-08 Issue:5 Volume:12 Page:1800034
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Song Anran¹²,Javaid Kashif¹³,Liang Yu¹,Wu Weihua¹,Yu Jingjing¹,Liang Lingyan¹^ORCID,Zhang Hongliang¹,Lan Linfeng⁴,Chang Ting-Chang⁵,Cao Hongtao¹

Affiliation:

1. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province & Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences; Ningbo 315201 China

2. Nano Science and Technology Institute, University of Science and Technology of China; Suzhou 215123 China

3. Department of Physics, Government College University Faisalabad; Allama Iqbal Road 38000 Faisalabad Pakistan

4. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology; Guangzhou 510640 China

5. Department of Physics, National Sun Yat-Sen University; Kaohsiung 80424 Taiwan

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Ningbo Municipal Science and Technology Innovative Research Team

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

2. Amorphous In–Ga–Zn Oxide Semiconducting Thin Films with High Mobility from Electrochemically Generated Aqueous Nanocluster Inks

3. A review on the recent developments of solution processes for oxide thin film transistors

4. Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

5. Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

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