Deuterium Markers in CdS and Zn(O,S) Buffer Layers Deposited by Solution Growth for Cu(In,Ga)Se2Thin-Film Solar Cells-Reference-Cited by-同舟云学术

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Deuterium Markers in CdS and Zn(O,S) Buffer Layers Deposited by Solution Growth for Cu(In,Ga)Se2Thin-Film Solar Cells

Published:2017-10-20 Issue:12 Volume:11 Page:1700288
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Witte Wolfram¹,De Souza Roger A.²,Martin Manfred²,Eicke Axel¹,Hariskos Dimitrios¹

Affiliation:

1. Zentrum für Sonnenenergie und Wasserstoff-Forschung Baden-Württemberg (ZSW); Meitnerstraße 1 70563 Stuttgart Germany

2. Institute of Physical Chemistry RWTH Aachen University; Landoltweg 2 52056 Aachen Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Solar cell efficiency tables (version 49)

2. A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se)2solar cells

3. New reaction kinetics for a high-rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2-based solar cells

4. Impacts of Post-Treatments on Cell Performance of CIGS Solar Cells With Zn-Compound Buffer Layers

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1. Mechanisms of copper protrusion in through-silicon-via structures at the nanoscale;Japanese Journal of Applied Physics;2018-11-19

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