Preferential MBE Growth and Characterization of SiGe Nanoislands on Depth-Selective Si Pits Etched by Ar+ Plasma-Reference-Cited by-同舟云学术

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Preferential MBE Growth and Characterization of SiGe Nanoislands on Depth-Selective Si Pits Etched by Ar+ Plasma

Published:2018-03-24 Issue:5 Volume:12 Page:1700424
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Şeker İsa¹,Karatutlu Ali²³^ORCID,İstengir Sümeyra⁴

Affiliation:

1. Fatih University, Bionanotechnology Research and Development Center (BINATAM); Buyukcekmece 34500 Istanbul Turkey

2. Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Bilkent University; 06800 Ankara Turkey

3. The Institute of Materials Science and Nanotechnology, Bilkent University; 06800 Ankara Turkey

4. Department of Physics, Yıldız Technical University; Davutpaşa 34210 Istanbul Turkey

Funder

Fatih University (Turkey)

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference22 articles.

1. A new route toward light emission from Ge: tensile-strained quantum dots

2. Ge-on-Si laser operating at room temperature

3. Electrically pumped lasing from Ge Fabry-Perot resonators on Si

4. High-performance Ge-on-Si photodetectors

5. Growth of shape controlled silicon nanowhiskers by electron beam evaporation

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