Polarity Inversion of Ga‐Polar GaN Surfaces by Exposing to Mg and NH <sub>3</sub> in Metal–Organic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Polarity Inversion of Ga‐Polar GaN Surfaces by Exposing to Mg and NH ₃ in Metal–Organic Vapor Phase Epitaxy

Published:2022-09-14 Issue:12 Volume:57 Page:2200086
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Li Chengguo¹^ORCID

Affiliation:

1. Institute of Semiconductors Guangdong Academy of Sciences Changxing Road 363 Guangzhou Guangdong 510651 China

Funder

National Natural Science Foundation of China

Guangdong Academy of Sciences

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.202200086

Reference28 articles.

1. Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

2. Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

3. Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates

4. Effect of buffer-layer engineering on the polarity of GaN films

5. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

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