Crystal Growth by Unidirectional Method ‐ A Generalized View on the Crystalline Perfection of the Uni‐Indexed, Bi‐Indexed, and Tri‐Indexed Plane Single Crystals

Author:

Aswathppa Sivakumar1,Sathiyadhas Sahaya Jude Dhas2,Muthuvel V.3,Dai Lidong1,Sathiyadhas Amalapushpam Martin Britto Dhas4ORCID

Affiliation:

1. Key Laboratory of High‐Temperature and High‐Pressure Study of the Earth's Interior, Institute of Geochemistry Chinese Academy of Sciences Guiyang Guizhou 550081 China

2. Department of Physics Kings Engineering College Sriperumbudur Chennai Tamilnadu 602 117 India

3. Department of Physics, School of Foundation Science Kumaraguru College of Technology Coimbatore Tamilnadu 641 049 India

4. Shock Wave Research Laboratory, Department of Physics, Abdul Kalam Research Center Sacred Heart College Tirupattur Vellore Tamil Nadu 635 601 India

Abstract

AbstractIn this article of generalized view, a comparison of the long‐range order crystalline perfection of crystals is made with respect to their planes grown by the unidirectional growth technique. Based on the obtained results, it is established that the uni‐indexed grown crystals yield a high degree of crystalline perfection and to a certain extent the bi‐indexed crystals, but tri‐indexed crystals grow with higher lattice disorders. Herein, uni‐indexed crystal means the crystal grown along a plane has only one integer out of the h, k, and l whereas the other values are zero [e.g., (100), (010), (001)]. Bi‐indexed crystal means the crystal grown along a plane has integers for any two of the h, k, and l but the remaining value is zero [e.g., (110), (011), (101)]. Tri‐indexed crystal means the crystal grown along the plane has integers for all the values of h, k, and l [e.g., (111)].

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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