Mechanisms of concurrent SiO desorption with oxide layer formation at Si(001) surface
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Reference18 articles.
1. Theoretical Studies on Surface Electronics States. Theory of Initial Oxidation Processes on Si Surface.
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3. Coexistence of passive and active oxidation for O2/Si(0 0 1) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy
4. SiO Mass Spectrometry and Si-2p Photoemission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O2Molecular Beams under 1000 K
5. Design of Surface Chemistry End-Station of BL23SU in SPring-8
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1. O2 Oxidation and Sublimation Kinetics of Single Silicon Nanoparticles at 1200–2050 K: Variation of Reaction Rates, Evolution of Structural and Optical Properties, and the Active-to-Passive Transition;The Journal of Physical Chemistry C;2022-11-01
2. Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials;ACS Applied Materials & Interfaces;2016-08-09
3. Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour;Microelectronics International;2013-12-20
4. Time-evolution of oxidation states at the Ni(111) surface: O2incident translational energy dependence;Journal of Physics: Conference Series;2013-03-01
5. Initial Sticking Rate of O2 Molecular Beams on Ni (111) Surface Depending on Kinetic Energy;Protection of Materials and Structures From the Space Environment;2012-06-04
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