A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology-Reference-Cited by-同舟云学术

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A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology

Published:2004 Issue:1 Volume:42 Page:58-60
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Lu Shey-Shi,Lin Yo-Sheng,Lee Bo-Wei

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. and Concurrent dual-band CMOS low-noise amplifiers and receiver architectures, 2001 Symp VLSI Circ Dig, 2001, pp. 247-250.

2. US Frequency Allocation Chart.

3. and A 900-MHz/1.8-GHz CMOS receiver for dual-band applications, ISSCC Dig 1998, pp. 124-125.

4. and A 900-MHz, 0.8-?m CMOS low-noise amplifier with 1.2-dB noise figure, CICC Proc 1999, pp. 661-664.

5. A 1.5-V, 1.5-GHz CMOS low noise amplifier

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1. A GPS LNA RFIC with voltage-controlled noise and input matching;Microwave and Optical Technology Letters;2011-12-15

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