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An AlGaAs/GaAs-based planar Gunn diode oscillator with a fundamental frequency operation of 120 GHz

  • Published:2014-07-22 Issue:10 Volume:56 Page:2449-2451
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Maricar Mohamed Ismaeel1,Glover James2,Khalid Ata3,Li Chong3,Evans Gwynne2,Cumming David S. R.3,Oxley Christopher H.4

Affiliation:

1. Electronics Engineering; De Montfort University; Leicestershire United Kingdom

2. Faculty of Technology; De Montfort University; Leicestershire United Kingdom

3. MicroSystem Technology Research Group; University of Glasgow; Glasgow United Kingdom

4. Electronics; De Montfort University; Leicestershire United Kingdom

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Terahertz technology;Siegel;IEEE Trans Microwave Theory Tech,2002

2. Terahertz Sources and Detectors

3. High-performance second-harmonic operation W-band GaAs Gunn diodes;Teng;IEEE Electron Device Lett,1989

4. Numerical modeling of TeraHertz electronic devices;Varani;J Comput Electron,2006

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