30-4: Characterization of Si Thin Films Doped by Wet-Chemical Laser Processing
Author:
Affiliation:
1. Graduate School of Information Science and Electrical Engineering; Kyushu University; Fukuoka Japan
2. Department of Gigaphoton Next GLP; Kyushu University; Fukuoka Japan
Publisher
Wiley
Reference7 articles.
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2. Surface-Free Technology by Laser Annealing (SUFTLA) and Its Application to Poly-Si TFT-LCDs on Plastic Film With Integrated Drivers;Inoue;IEEE Trans. on Electron Devices,2002
3. Low temperature poly-Si TFT-LCD by excimer laser anneal;Uchikoga;Thin Solid Films,2001
4. High-Performance Laser-Processed Polysilicon Thin-Film Transistors;Giust;IEEE Electron Device Lett,1999
5. Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements;Kuo;J. Mat. Process. Tech.,2009
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating;IEEE Journal of the Electron Devices Society;2020
2. Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication;Laser-based Micro- and Nanoprocessing XIII;2019-03-04
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