Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher‐Fold Weyl Fermionic System PtAl

Author:

Saini Vikas1ORCID,Punjal Ajinkya1,Pandey Utkarsh Kumar1,Puranik Ruturaj Vikrant1,Sharma Vikash1,Dwij Vivek1,Vijay Kritika23,Kulkarni Ruta1,Banik Soma23,Dharmadhikari Aditya4,Singh Bahadur1,Prabhu Shriganesh1,Thamizhavel A.1

Affiliation:

1. Department of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road, Colaba Mumbai 400005 India

2. Accelerator Physics and Synchrotrons Utilization Division Raja Ramanna Centre for Advanced Technology Indore 452013 India

3. Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai 400094 India

4. Department of Nuclear and Atomic Physics Tata Institute of Fundamental Research Homi Bhabha Road, Colaba Mumbai 400005 India

Abstract

AbstractIn topological materials, shielding of bulk and surface states by crystalline symmetries has provided hitherto unknown access to electronic states in condensed matter physics. Interestingly, photoexcited carriers relax on an ultrafast timescales, demonstrating large transient mobility that can be harnessed for the development of ultrafast optoelectronic devices. In addition, these devices are much more effective than topologically trivial systems because topological states are resilient to the corresponding symmetry‐invariant perturbations. By using optical pump probe measurements, the relaxation dynamics of a topologically nontrivial chiral single crystal, PtAl, is systematically described. Based on the experimental data on transient reflectivity and electronic structures, it is found that the carrier relaxation process involves both acoustic and optical phonons with oscillation frequencies of 0.06 and 2.94 THz, respectively, in picosecond time scale. PtAl with a space group of P213 allows only one non‐zero susceptibility element, i.e., d14, in second harmonic generation (SHG) with a large value of 468(1) pm V–1, which is significantly higher than that observed in standard GaAs(111) and ZnTe(110) crystals. The intensity dependence of the SHG signal in PtAl reveals a non‐perturbative origin. The present study on PtAl provides deeper insight into topological states that will be useful for ultrafast optoelectronic devices.

Funder

Department of Atomic Energy, Government of India

Publisher

Wiley

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