Selective Etching of Silicon from Ti3 SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)-Reference-Cited by-同舟云学术

Selective Etching of Silicon from Ti3 SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)

Published:2018-03-26 Issue:19 Volume:57 Page:5444-5448
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Alhabeb Mohamed¹^ORCID,Maleski Kathleen¹^ORCID,Mathis Tyler S.¹,Sarycheva Asia¹,Hatter Christine B.¹^ORCID,Uzun Simge¹^ORCID,Levitt Ariana¹^ORCID,Gogotsi Yury¹^ORCID

Affiliation:

1. A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering; Drexel University; 3141 Chestnut Street Philadelphia PA 19104 USA

Funder

Fluid Interface Reactions, Structures and Transport (FIRST) Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences.

Publisher

Wiley

Subject

General Chemistry,Catalysis

Reference60 articles.

1. Two-Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2

2. MAX Phases

3. NMR reveals the surface functionalisation of Ti3C2MXene

4. Ultra-high-rate pseudocapacitive energy storage in two-dimensional transition metal carbides

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